Improved Electrical Properties of "Boron-rich Films for Semiconductors Devices
RFT-299
Scientists working at North Dakota State University’s Center for Nanoscale Science and Engineering (CNSE) have developed novel processing conditions necessary for enhancing the charge collection and transport efficiency of p-type boron-rich semiconducting solids by an order-of-magnitude over the prior art. The advances made in the processing of the boron-carbide materials enable the enhancement of radiation-hardened semiconducting materials that can be used in applications where traditional semiconductors would fail.
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File: rft-299.pdf
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